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 SSM3J13T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM3J13T
Power Management Switch High Speed Switching Applications
* * * Small Package Low on Resistance : Ron = 70 m (max) (@VGS = -4 V) : Ron = 95 m (max) (@VGS = -2.5 V) Low Gate Threshold Voltage
Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) Tch Tstg Rating -12 8 -3.0 -6.0 1.25 150 -55~150 A Unit V V
Drain power dissipation Channel temperature Storage temperature range
W C C
JEDEC JEITA TOSHIBA
2-3S1A
Note:
Weight: 10 mg (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature.
Marking
3
Equivalent Circuit
3
KDH
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account
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SSM3J13T
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth |Yfs| Test Condition VGS = 8 V, VDS = 0 ID = -1 mA, VGS = 0 ID = -1 mA, VGS = 8 V VDS = -12 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -1.5 A ID = -1.5 A, VGS = -4 V Drain-Source ON resistance RDS (ON) ID = -1.5 A, VGS = -2.5 V ID = -1.5 A, VGS = -2.0 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff (Note 3) (Note 3) (Note 3) (Note 3) Min -12 -4 -0.45 3.8 Typ. Max 1 -1 -1.1 70 95 180 pF pF pF ns m Unit A V V A V S
50 70 90 890 203 288 48 120
VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDD = -10 V, ID = -1 A VGS = 0~-2.5 V, RG = 4.7
Note 3: Pulse test
Switching Time Test Circuit
(a) Test circuit
0 -2.5 V 10 s OUT VDD = -10 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25C
(b) VIN
0V
10% 90%
IN RG
-2.5 V VDS (ON) 90% 10% tr ton
(c) VOUT
VDD
VDD
tf toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device.
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ID - VDS
-4 -4 V -2.5 V -3 -2.0 V -1.8 V -1.6 V -10000 Common Source Ta = 25C -1000 Common Source VDS = -3 V
ID - VGS
(mA)
(A)
75C -100 Ta = 25C
Drain current ID
Drain current ID
-1.5 V -2 -1.4 V -1 VGS = -1.2 V 0 0
-10
-25C
-1
-0.1
-0.5
-1
-1.5
-2
-0.01 0
-0.5
-1
-1.5
-2
Drain-Source voltage
VDS (V)
Gate-Source voltage
VGS (V)
RDS (ON) -ID
250 Common Source Ta = 25C 200 400 500
RDS (ON) - VGS
Common Source ID = -1.5 A Ta = 25C
Drain-Source on resistance RDS (ON) (m)
150 VGS = -2 V -2.5 V 50 -4 V
Drain-Source on resistance RDS (ON) (m)
-6
300
100
200
100
0 0
-2
-4
0 0
-2
-4
-6
-8
Drain current ID (A)
Gate-Source voltage
VGS (V)
RDS (ON) - Ta
160 Common 140 Source 120 100 80 60 40 20 0 -25 0.1 -0.01 -2.5 V -4 V ID = -1.5 A VGS = -2 V 100
|Yfs| - ID
Common Source VDS = -3 V Ta = 25C 10
Forward transfer admittance |Yfs| (S)
Drain-Source on resistance RDS (ON) (m)
1
0
25
50
75
100
125
150
-0.1
-1
-10
Ambient temperature Ta (C)
Drain current ID (A)
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SSM3J13T
Vth - Ta
-1 Common Source VDS = -3 V -0.8 ID = -0.1 mA 1400 1200
C - VDS
Common Source VGS = 0 f = 1 MHz Ta = 25C Ciss 800 600 400 Coss 200 Crss
Vth (V)
(pF)
-0.4 -0.2
1000
Gate threshold voltage
Capacitance C
-0.6
0 -25
0
25
50
75
100
125
150
0 0
2
4
6
8
10
12
14
Ambient temperature Ta (C)
Drain-Source voltage
VDS
(V)
t - ID
1000 500 300 -3 Common Source VDD = -10 V VGS = 0 -2.5 V Ta = 25C RG = 4.7 toff 100 50 30 ton tr 10 -0.01 0 0 tf Common Source VGS = 0 Ta = 25C -2
IDR - VDS
Drain reverse current IDR (A)
D
Switching time t (ns)
G S
-1
-0.1
-1
-10
0.4
0.8
1.2
Drain current ID (A)
Drain-Source voltage
VDS
(V)
PD - Ta
1.5 t = 10 s Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm )
Drain power dissipation PD (W)
1.25
1
0.75
DC
0.5
0.25
0 0
25
50
75
100
125
150
Ambient temperature Ta (C)
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SSM3J13T
Safe operating area
-10 ID max (pulsed) ID max (continuous) 10 ms*
Drain current ID (A)
-1
10 s*
DC operation
-0.1 Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25C Curves must be derated linearly with increase in temperature. -1
VDSS max -10 -100
-0.01 -0.1
Drain-Source voltage
VDS (V)
rth - tw
1000 Single pulse
Transient thermal impedance rth (C /W)
100
Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 645 mm )
10
1
0.1 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width
tw (s)
5
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SSM3J13T
RESTRICTIONS ON PRODUCT USE
* Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01


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